Soukiassian

发表

Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA.

Kahn, Forrest, Hirose, 1996, Physical review. B, Condensed matter.

Atomic Structure of the beta -SiC(100)-(3 x 2) Surface.

Soukiassian, Semond, Mayne, 1996, Physical review letters.

Adsorbate-induced shifts of electronic surface states: Cs on the (100) faces of tungsten, molybdenum, and tantalum.

Freeman, Chubb, Wimmer, 1985, Physical review. B, Condensed matter.

Electronic promotion of silicon nitridation by alkali metals.

Bakshi, Gentle, Soukiassian, 1987, Physical review letters.

Bonding at the K/Si(100) 2 x 1 interface: A surface extended x-ray-absorption fine-structure study.

Pianetta, Kendelewicz, Lindau, 1988, Physical review. B, Condensed matter.

Atomic structure, adsorbate ordering, and mode of growth of the K/Si(100)2 x 1 surface.

Soukiassian, Mangat, Kubby, 1992, Physical Review B (Condensed Matter).

Alkali-metal-induced interface resonant state on a semiconductor surface.

Kendelewicz, Soukiassian, Hurych, 1989, Physical Review B (Condensed Matter).

Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces.

Bakshi, Kendelewicz, Lindau, 1988, Physical review. B, Condensed matter.

Alkali-metal-promoted oxidation of the Si(100)2 x 1 surface: Coverage dependence and nonlocality.

Soukiassian, Starnberg, Hurych, 1989, Physical review. B, Condensed matter.

Thermal growth of SiO2-Si interfaces on a Si(111)7 x 7 surface modified by cesium.

Bakshi, Soukiassian, Starnberg, 1988, Physical review. B, Condensed matter.

Unoccupied surface states on W(001) and Mo(001) by inverse photoemission.

Fu, Freeman, Straub, 1986, Physical review. B, Condensed matter.

Electronic promoters and semiconductor oxidation: Alkali metals on Si(111) surfaces.

Wall, Chang, Franciosi, 1987, Physical review. B, Condensed matter.

Room-temperature nitridation of gallium arsenide using alkali metal and molecular nitrogen.

Kendelewicz, Soukiassian, Starnberg, 1990, Physical review. B, Condensed matter.

Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperature.

Soukiassian, Mangat, Schirm, 1994, Physical review. B, Condensed matter.

Precursor molecular-oxygen state in the initial catalytic oxidation of the InP(110) surface modified by alkali metals.

Bakshi, Soukiassian, Starnberg, 1988, Physical review. B, Condensed matter.

Identification of surface core-level shift origin for prototypical Cs/Si(100) 2 x 1 system by photoemission EXAFS.

Soukiassian, Mangat, 1995, Physical review. B, Condensed matter.

Structure of the Na/Si(100)2 x 1 and Cs/Si(100)2 x 1 interfaces investigated by photoemission extended x-ray-absorption fine structure.

Kim, Barbier, Kapoor, 1991, Physical review. B, Condensed matter.

Ge(100) 2 x 1 and c(4 x 2) surface reconstructions studied by ab initio total-energy molecular-force calculations.

Freeman, Spiess, Soukiassian, 1994, Physical review. B, Condensed matter.

Determination of the Na/Si(100)2 x 1 surface and interface geometry by polarization-dependent photoemission extended x-ray-absorption fine structure and ab initio total-energy molecular calculations.

Tang, Freeman, Spiess, 1993, Physical review. B, Condensed matter.

Nature of the states near the Fermi level of the layered superconductors of Bi2Ca1Sr2Cu2O8 and Bi2Sr2CuO6.

Shen, Eom, Lindberg, 1989, Physical Review B (Condensed Matter).

ZnSe(100) surface: Atomic configurations, composition, and surface dipole.

Chen, Kahn, Gaines, 1994, Physical review. B, Condensed matter.

Direct and Rb-promoted SiOx/ beta -SiC(100) interface formation.

Dupont, Soukiassian, Jaussaud, 1995, Physical review. B, Condensed matter.