K. Müller

Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

G. Prinke, H. Ryssel, J. Biersack, 1981 .

The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reaction

K. Müller, R. Henkelmann, Hartmut Dr Boroffka, 1975 .

Comparison of range and range straggling of implanted 10B and 11B in silicon

H. Ryssel, J. P. Biersack, K. Müller, 1977 .

High concentration effects of ion implanted boron in silicon

K. Haberger, H. Ryssel, H. Ryssel, 1980 .