Hyung-Seok Lee

发表

A Study on the Measurement of Load Torque by the Field Coil Current in an Eddy Current Dynamometer

Eung-Suk Lee, Byung-Su Mun, Hyung-Seok Lee, 2001 .

An Analytic Study on the Bond Stress between Concrete and Steel Tube in CFT Rectangular Column

Won-Ho Kim, Sung-Moo Park, Hyung-Seok Lee, 2002 .

Noise Attenuation Effect According to the Direction of Secondary Sound Source in Duct ANC System

Eung-Suk Lee, Hyung-Seok Lee, 2009 .

Test methods for fine aggregate angularity considering resistance of rutting

Hyung-Seok Lee, Dae Wook Park, 2002 .

Pre-Association Messaging Framework for Mobile Proximity Service Based on Wi-Fi P2P

Cheol-Hoon Lee, Jae-Ho Lee, Hyung-Seok Lee, 2016, IEICE Trans. Commun..

Scaling of InAlN/GaN power transistors

Xiang Gao, Daniel Piedra, Tomás Palacios, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Patent Trend of Biotechnology and Attention Point in Patent Filing Process

Hyung-Seok Lee, Yea-Sook Kim, Eun-Hee Bang, 2004 .

Analysis of the base current and saturation voltage in 4H-SiC power BJTs

Hyung-Seok Lee, M. Ostling, M. Domeij, 2007, 2007 European Conference on Power Electronics and Applications.

Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs

Hyung-Seok Lee, K. Ryu, T. Palacios, 2012, IEEE Electron Device Letters.

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, T. E. Kazior, Hyung-Seok Lee, 2012 .

1200-V 5.2-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain

Hyung-Seok Lee, M. Ostling, M. Domeij, 2007, IEEE Electron Device Letters.

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2008 .

High power bipolar junction transistors in silicon carbide

Hyung-Seok Lee, 2005 .

High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE

R. Ghandi, Hyung-Seok Lee, M. Ostling, 2008, IEEE Transactions on Electron Devices.

Fabrication of 2700-V 12-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

R. Ghandi, Hyung-Seok Lee, M. Ostling, 2008, IEEE Electron Device Letters.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2013 .

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

Xiang Gao, Hyung-Seok Lee, D. Piedra, 2012, IEEE Electron Device Letters.

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2009 .

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

Hyung-Seok Lee, Dong Seup Lee, T. Palacios, 2011, IEEE Electron Device Letters.

Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2012 .

A BiCMOS process utilizing selective epitaxy for analog/digital applications

Rafael Reif, Hyung-Seok Lee, 1989 .

High Current Gain Silicon Carbide Bipolar Power Transistors

Hyung-Seok Lee, M. Ostling, M. Domeij, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2006 .

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2008 .