D. Pham

Finfet with isolated n+ and p+ gate regions strapped with metal and polysilicon

J. Conner, A. Vandooren, B. E. White, 2003, 2003 IEEE International Conference on SOI.

Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics

P. Zeitzoff, B.H. Lee, S.C. Song, 2006, 2006 IEEE international SOI Conferencee Proceedings.

Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions

J. Conner, A. Vandooren, S. Samavedam, 2003, IEEE Electron Device Letters.

Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

A. Vandooren, S. Samavedam, I. To, 2003, IEEE International Electron Devices Meeting 2003.

Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO/sub 2/) gate dielectric

A. Vandooren, S. Murphy, I. To, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..