N. Kaneda

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

T. Mishima, T. Nakamura, Y. Hatakeyama, 2011, IEEE Electron Device Letters.

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Huili Grace Xing, Kazuki Nomoto, T. Mishima, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).