N. Ikoma

High reliability 1.3-μm buried heterostructure AlGaInAs-MQW DFB laser operated at 28-Gbit/s direct modulation

K. Uesaka, N. Kaida, T. Nakabayashi, 2012, ISLC 2012 International Semiconductor Laser Conference.

Highly reliable GaInAs/GaInP 0.98 /spl mu/m window laser

T. Katsuyama, T. Katsuyama, J. Hashimoto, 2000, Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).