Brett A. Hull

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

John W. Palmour, H. Lendenmann, Marek Skowronski, 2006 .

1700V 4H-SiC MOSFETs and Schottky diodes for next generation power conversion applications

Jason Henning, Robert Callanan, Anthony Olmedo, 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Anant K. Agarwal, Aivars J. Lelis, John W. Palmour, 2010 .