Karim Cherkaoui

发表

Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure

Alexei Nazarov, Paul K. Hurley, Ian M. Povey, 2013 .

Multi-technique characterization of MOVPE-grown GaAs on Si

Paul K. Hurley, Patrick J. McNally, Scott Monaghan, 2010 .

Quest for an optimal Gadolinium Silicate gate dielectric stack

Max C. Lemme, Steve Hall, Paul R. Chalker, 2008 .

(Invited) The Inversion Behaviour of Narrow Band Gap Mos Systems: Experimental Observations, Physics Based Simulations and Applications

Uthayasankaran Peralagu, David Millar, Iain G. Thayne, 2017 .

Leakage current effects on C-V plots of high-k MOS capacitors

Max C. Lemme, Steve Hall, Paul K. Hurley, 2008 .

Electrically active interface defects in the (100)Si/SiOx/HfO2/TiN system: Origin, instabilities and passivation

Karim Cherkaoui, Paul K. Hurley, A. W. Groenland, 2006 .

Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures

Pedram Razavi, Ran Yu, S. Barraud, 2013 .

Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

Gabriel M. Crean, S. W. Bland, Sylvain Delage, 2002 .

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Mircea Modreanu, Paul K. Hurley, Scott Monaghan, 2008 .

Electrical characterization of the soft breakdown failure mode in MgO layers

Paul K. Hurley, Eamon O'Connor, Scott Monaghan, 2009 .

High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

Carmel Kelleher, Brian Corbett, Karim Cherkaoui, 2004 .

Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications

Karim Cherkaoui, Tsu-Jae King Liu, Kyoungsub Shin, 2007 .

Impact of H 2 /N 2 annealing on interface defect densities in Si(100)/SiO 2 /HfO 2 /TiN gate stacks

Max C. Lemme, Tom Schram, Paul K. Hurley, 2005 .

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

Steve Hall, Paul K. Hurley, Olof Engström, 2009 .

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Paul K. Hurley, Eamon O'Connor, Ian M. Povey, 2009 .

Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation

Brian Corbett, Alan P. Morrison, Karim Cherkaoui, 2012 .

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Max C. Lemme, Steve Hall, Paul R. Chalker, 2009 .

Back-gated Nb-doped MoS2 junctionless field-effect-transistors

Felice Crupi, Paul K. Hurley, Ian M. Povey, 2016 .

In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

Paul K. Hurley, Eamon O'Connor, Ian M. Povey, 2008 .

Hall-effect mobility for a selection of natural and synthetic 2D semiconductor crystals

Paul K. Hurley, Ian M. Povey, Roger E. Nagle, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

Max C. Lemme, Steve Hall, Octavian Buiu, 2008 .

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Max C. Lemme, Steve Hall, Octavian Buiu, 2007 .

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

Paul K. Hurley, Andreas Schenk, Scott Monaghan, 2009 .

Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects

Sylvain Barraud, Tamara Rudenko, Ran Yu, 2013, IEEE Electron Device Letters.

Gd silicate: A high-k dielectric compatible with high temperature annealing

Max C. Lemme, Steve Hall, Paul R. Chalker, 2009 .