Vladimir Djara

发表

Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure

Alexei Nazarov, Paul K. Hurley, Ian M. Povey, 2013 .

(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology

Lukas Czornomaz, Eamon O'Connor, Vladimir Djara, 2015 .

(Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm

Lukas Czornomaz, Jean-Michel Hartmann, Vladimir Djara, 2014 .

Large-scale parallel arrays of silicon nanowires via block copolymer directed self-assembly.

Nikolay Petkov, Vladimir Djara, Tarek Lutz, 2012, Nanoscale.

Monitoring PMMA Elimination by Reactive Ion Etching from a Lamellar PS-b-PMMA Thin Film by ex Situ TEM Methods

Justin D. Holmes, Richard A. Farrell, Nikolay Petkov, 2010 .

First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

Lukas Czornomaz, Karthik Balakrishnan, Eamon O'Connor, 2016 .

Three-dimensional monolithic integration of III–V and Si(Ge) FETs for hybrid CMOS and beyond

Lukas Czornomaz, Karthik Balakrishnan, Thomas Morf, 2017 .

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and

Lukas Czornomaz, Vladimir Djara, Jean Fompeyrine, 2016, IEEE Electron Device Letters.

Inductively coupled plasma deep etching of InP/InGaAsP in Cl2/CH4/H2 based chemistries with the electrode at 20 °C

Brian Corbett, Frank H. Peters, Vladimir Djara, 2012 .

Organic photovoltaic devices: influence of the cell configuration on its performences

Vladimir Djara, Jean Christian Bernède, H. Derouiche, 2005 .