T.W.H. Phua

Role of Nitrogen on the Gate Length Dependence of NBTI

L.J. Tang, D.S. Ang, C.M. Ng, 2009, IEEE Electron Device Letters.

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

D. Ang, C. Ling, D.S. Ang, 2003, IEEE Electron Device Letters.