L. Hall

45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process

F. Mehrad, H. Bu, L. Colombo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Reliability properties of low-voltage ferroelectric capacitors and memory arrays

K. Remack, K. Boku, T. Moise, 2004, IEEE Transactions on Device and Materials Reliability.

An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes

B. Hornung, C. Machala, A. Krishnan, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..