I. Manning

发表

Impact of Subsurface Damage on SiC Wafer Shape

G. Chung, K. Moeggenborg, I. Manning, 2019, Materials Science Forum.

Effects of Silicon Doping and Threading Dislocation Density on Stress Evolution in AlGaN Films

J. Redwing, M. Fanton, D. Snyder, 2012 .

Dislocation bending and tensile stress generation in GaN and AlGaN films

S. Raghavan, J. Redwing, X. Weng, 2012 .

Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films

J. Redwing, M. Fanton, D. Snyder, 2009 .

In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films

J. Redwing, D. Snyder, X. Weng, 2008 .

Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

G. Chung, M. Dudley, B. Raghothamachar, 2019 .

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

S. Raghavan, J. Redwing, D. Snyder, 2007, 2007 International Semiconductor Device Research Symposium.

Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy

G. Chung, W. Bowen, I. Manning, 2019, Materials Science Forum.

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2019, Materials Science Forum.

Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016, Journal of Electronic Materials.

High Quality 150 mm 4H SiC Wafers for Power Device Production

Edward Sanchez, Ian Manning, Kevin Moeggenborg, 2015 .

Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1−xN

J. Redwing, M. Fanton, D. Snyder, 2010 .

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2020, Journal of Electronic Materials.

Optimization of 150 mm 4H SiC Substrate Crystal Quality

G. Chung, M. Dudley, B. Raghothamachar, 2018, Materials Science Forum.

Large Area 4H SiC Products for Power Electronic Devices

Jie Zhang, G. Chung, D. Hansen, 2016 .

Development and characterization of Au-YSZ surface plasmon resonance based sensing materials: high temperature detection of CO.

Ian Manning, Michael A Carpenter, P. Rogers, 2006, The journal of physical chemistry. B.

Prismatic Slip in PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2017, Journal of Electronic Materials.

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2021, Journal of Electronic Materials.

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2020 .

Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing

A. Soukhojak, I. Manning, Matthew A. Gave, 2022, Materials Science Forum.

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Jie Zhang, M. Loboda, G. Chung, 2014 .

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2020 .

Defect Reduction Paths in SiC Epitaxy

Jie Zhang, M. Loboda, G. Chung, 2014 .

Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers

M. Dudley, Jun Gyu Kim, B. Raghothamachar, 2018, Journal of Electronic Materials.

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Advances in 200 mm 4H SiC Wafer Development and Production

A. Soukhojak, K. Moeggenborg, I. Manning, 2022, Materials Science Forum.

Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016 .

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2016 .