Y. Erokhin

Modeling of ultra-low energy boron implantation in silicon

A. Agarwal, H.-H. Vuong, J. Bevk, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Ultra-low cost and high performance 65nm CMOS device fabricated with plasma doping

B. Tavel, P. Stolk, F. Arnaud, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

L. Pelaz, A. Agarwal, T. E. Haynes, 1997, International Electron Devices Meeting. IEDM Technical Digest.