Alain Cappy

发表

A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design

Francois Danneville, Gilles Dambrine, J.-M. Belquin, 1998 .

Ballistic Nanodevices for Terahertz Data Processing – Nanotera Project IST-2001-32517

Beatriz G. Vasallo, Isabelle Huynen, Alain Cappy, 2005 .

Quasi-Two-Dimensional Models for MESFETs and HEMTs

Alain Cappy, 1993 .

Millimeter-wave passive imaging system for survey and obstacle detection in ITS

Marc Heddebaut, M. Klingler, Alain Cappy, 2001 .

On the validity of a new extrinsic equivalent circuit including noise of HEMTs required for millimeter wave circuit design

Gilles Dambrine, Alain Cappy, Jean-Maxence Belquin, 1997, Ann. des Télécommunications.

A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs

Alain Cappy, Sylvie Lepilliet, Xavier Wallart, 1998 .

Hemt’s capability for millimeter wave applications

Henri Happy, Alain Cappy, M. Zaknoune, 2001, Ann. des Télécommunications.

High frequency four noise parameters of Silicon-on-Insulator-based technology MOSFET: Prospects for application to low noise RF integrated circuits

Jean-Pierre Raskin, L. Picheta, Danielle Vanhoenacker-Janvier, 1999 .

Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

Francois Danneville, Gilles Dambrine, Alain Cappy, 1998 .

Helena: A Physical Modeling for the DC, AC, Noise and Non Linear HEMT Performance

Francois Danneville, Henri Happy, Gilles Dambrine, 1993 .

Monte-Carlo Simulation of a ballistic Y-branch junction (YBJ)

Isabelle Huynen, Vincent Bayot, Alain Cappy, 2003 .

A new method for on-wafer high frequency noise measurement of FETs

G. Dambrine, Alain Cappy, E. Delos, 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

94-GHz MMIC CPW low-noise amplifier on InP

Gilles Dambrine, Alain Cappy, S. Boret, 1999, Optics East.

Physical modelling of microwave field effect transistors: a review

G. Salmer, Alain Cappy, J. Zimmermann, 1988, 1988., IEEE International Symposium on Circuits and Systems.

Imaging coherent electron flow in quantum rings

Serge Huant, Joël Chevrier, Vincent Bayot, 2006 .

Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs

Javier Mateos, Daniel Pardo, Alain Cappy, 2001, Microelectron. Reliab..

Monte Carlo simulator for the design optimization of low-noise HEMTs

Alain Cappy, D. Pardo, Javier Mateos, 2000 .

Temperature noise model for FET mixers

Francois Danneville, Gilles Dambrine, Alain Cappy, 2000 .

An overview of low noise devices and associated circuits for 100-200 GHz space applications

Patrice Landry, Henri Happy, Gilles Dambrine, 2003 .

Helena: A friendly software for calculating the DC, AC, and noise performance of HEMTs

Francois Danneville, Henri Happy, Gilles Dambrine, 1993 .

HELENA: a new software for the design of MMICs

Henri Happy, Gilles Dambrine, Alain Cappy, 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

Daniel Pardo, Alain Cappy, Francois Danneville, 1996 .

Trends and challenge in micro and nanoelectronics device research in Europe

W. Knap, Alain Cappy, Nicolas Wichmann, 2005 .

Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range

B. Bonte, C. Gaquiere, Alain Cappy, 2001 .

Influence of the gate leakage current on the noise performance of MESFETs and MODFETs

Francois Danneville, Henri Happy, Gilles Dambrine, 1995 .

Modeling of submicrometer gate GaAs field effect transistors

G. Salmer, Marc Lefebvre, Renaud Fauquembergue, 1988 .

Ultra low power analog design and technology for artificial neurons

Christophe Loyez, Alain Cappy, François Danneville, 2017, 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

HEMT's capability for

Henri Happy, Alain Cappy, Sylvain Bollaert, 2001 .

A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology

Christophe Loyez, Alain Cappy, Eric Mercier, 2017, Front. Neurosci..

A Sub-35 pW Axon-Hillock artificial neuron circuit

Christophe Loyez, Alain Cappy, Ilias Sourikopoulos, 2019, Solid-State Electronics.

Neuro‐inspired Information Processing

Alain Cappy, 2020 .

Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach

Henri Happy, Alain Cappy, Yvon Cordier, 1990, Eur. Trans. Telecommun..

Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization

Alain Cappy, Y. Druelle, Yvon Cordier, 1992 .

Microscopic modeling of nonlinear transport in ballistic nanodevices

Beatriz G. Vasallo, Alain Cappy, Sylvain Bollaert, 2003 .

Sign reversal and tunable rectification in a ballistic nanojunction

Vincent Bayot, Alain Cappy, Loïk Gence, 2004 .

High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

Jean-Pierre Colinge, Jean-Pierre Raskin, Francois Danneville, 1999 .

A new method for on wafer noise measurement

Francois Danneville, Henri Happy, Gilles Dambrine, 1993 .

Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

Beatriz G. Vasallo, Alain Cappy, Sylvain Bollaert, 2003 .

Non-linear noise in high-frequency devices

Francois Danneville, Alain Cappy, Olivier Llopis, 2001 .

Noise in two dimensional electron gas field effect transistor

Alain Cappy, G. Salmer, A. Cappy, 1985 .

Room-temperature terahertz emission from nanometer field-effect transistors

C. Gaquiere, N. Dyakonova, Wojciech Knap, 2006 .

Microwave performance of 0.4 mu m gate metamorphic In/sub 0.29/Al/sub 0.71/As/In/sub 0.3/Ga/sub 0.7/As HEMT on GaAs substrate

Alain Cappy, Sylvie Lepilliet, Y. Druelle, 1993 .

Oblique modes effect on terahertz plasma wave resonant detection in InGaAs∕InAlAs multichannel transistors

N. Dyakonova, Gintaras Valušis, Dominique Coquillat, 2008 .

Monte Carlo calculations of hot‐carrier noise under degenerate conditions

Francois Danneville, Alain Cappy, Luca Reggiani, 1996 .

Experimental investigation of stochastic resonance in a 65nm CMOS artificial neuron

Christophe Loyez, Francois Danneville, Laurent Clavier, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

Electron transport properties of strained InxGa1−xAs

Alain Cappy, R. Fauquembergue, Jean-Luc Thobel, 1990 .

94-GHz low noise amplifier on InP in coplanar technology

Henri Happy, Alain Cappy, S. Boret, 1999 .

The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter

Henri Happy, Alain Cappy, Sylvie Lepilliet, 2000 .

Vincent Bayot, Alain Cappy, Benoît Hackens, 2006 .

Terahertz detection by GaN/AlGaN transistors

Michael S. Shur, C. Gaquiere, F. Teppe, 2006 .

Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot

Vincent Bayot, Alain Cappy, Benoît Hackens, 2002 .

Frequency dependence of source access resistance of heterojunction field-effect transistor

Alain Cappy, C. Versnaeyen, G. Salmer, 1985 .

Influence of Al mole fraction on the noise performance of GaAs/Al/sub x/Ga/sub 1-x/As HEMT's

Francois Danneville, Alain Cappy, Javier Mateos, 1998 .

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Michael S. Shur, F. Teppe, N. Dyakonova, 2005 .

Selective wet etching of lattice‐matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid/hydrogen peroxide solution

Alain Cappy, A. Cappy, Hervé Fourre, 1996 .

Ballistic nano-devices for high frequency applications

Beatriz G. Vasallo, Isabelle Huynen, Alain Cappy, 2007 .

Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

Francois Danneville, Henri Happy, Gilles Dambrine, 1994 .