Sergey A. Nikishin

发表

Green light emission from selectively grown InGaN multiple quantum well stripes oriented along [11-20] direction

W. Feng, Vladimir Kuryatkov, Mahesh Pandikunta, 2009, OPTO.

Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

Sergey A. Nikishin, B. Borisov, Vladimir Kuryatkov, 2006, SPIE OPTO.

AlN/AlGaInN superlattice light-emitting diodes at 280 nm

Henryk Temkin, Vladimir Kuryatkov, Sergey A. Nikishin, 2003 .

AlGaInN-based ultraviolet light-emitting diodes grown on Si 111

Henryk Temkin, Vladimir Kuryatkov, Sergey A. Nikishin, 2002 .

HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA

Henryk Temkin, N. N. Faleev, Sergey A. Nikishin, 1999 .

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Henryk Temkin, Andrei Osinsky, Leonid Chernyak, 1996 .

X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration

Sergey A. Nikishin, Mark Holtz, Ayrton A. Bernussi, 2009 .

Deep Ultraviolet AlGaInN‐Based Light‐Emitting Diodes on Si(111) and Sapphire

Henryk Temkin, Vladimir Kuryatkov, Sergey A. Nikishin, 2002 .

Mg and O codoping in p-type GaN and AlxGa1−xN (0

Henryk Temkin, Rene Asomoza, Vladimir Kuryatkov, 2002 .

Composition dependence of the optical phonon energies in hexagonal AlxGa1−xN

Henryk Temkin, Sergey A. Nikishin, Mark Holtz, 2001 .

Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy

Henryk Temkin, N. N. Faleev, Sergey A. Nikishin, 1997 .

Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N

Henryk Temkin, Vladimir Kuryatkov, Sergey A. Nikishin, 2003 .

Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

Henryk Temkin, N. N. Faleev, Sergey A. Nikishin, 2000 .