M. Terao

Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations

K. Osada, T. Kawahara, M. Moniwa, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

A. Kotabe, M. Moniwa, S. Hanzawa, 2007, 2007 IEEE International Electron Devices Meeting.

A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations

K. Osada, T. Kawahara, R. Takemura, 2003, IEEE International Electron Devices Meeting 2003.

Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories

M. Moniwa, S. Hanzawa, T. Iwasaki, 2006, 2006 International Electron Devices Meeting.