Hisao Katto

发表

VLSI reliability challenges: from device physics to wafer scale systems

Kunihiko Ikuzaki, Eiji Takeda, Toshio Sasaki, 1995 .

VLSI reliability challenges: from device physics to wafer scale systems

Kunihiko Ikuzaki, Eiji Takeda, Akemi Hamada, 1993, Proc. IEEE.

Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model

Hisao Katto, 2000 .

4377819 Semiconductor device

Hisao Katto, Yoshio Sakai, Toshiaki Masuhara, 1983 .

Wafer Level Study of Electromigration Failures of Aluminum Alloys And Layered Structures

Hisao Katto, 1993 .

Stress Induced Migration of Aluminum Alloys

Hisao Katto, 1993 .

Hot Carrier Degradation of MOSFETs

Hisao Katto, 1993 .

Analytical expressions for the static MOS transistor characteristics based on the gradual channel model

Hisao Katto, Y. Itoh, 1974 .

Low‐frequency 1/f noise in MOSFET’s at low current levels

Hisao Katto, Masaaki Aoki, M. Aoki, 1977 .