Hema C. P. Movva

发表

Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications

Sanjay K. Banerjee, Priyamvada Jadaun, L. Register, 2013, 1301.4265.

Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures

Amritesh Rai, Takashi Taniguchi, Kenji Watanabe, 2016, 2016 74th Annual Device Research Conference (DRC).

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

S. Banerjee, C. Corbet, C. McClellan, 2014 .

Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators

S. Banerjee, S. Sonde, Hema C. P. Movva, 2016, 1601.05789.

Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

S. Banerjee, T. Pramanik, B. Satpati, 2016, ACS applied materials & interfaces.

Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators.

S. Banerjee, D. Neikirk, S. Bank, 2017, ACS nano.

Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3

S. Banerjee, T. Pramanik, L. Colombo, 2014 .

Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}.

S. Banerjee, S. Larentis, Kenji Watanabe, 2017, Physical review letters.

Evidence of Formation of Superdense Nonmagnetic Cobalt

B. Satpati, Surendra Singh, Hema C P Movva, 2016, Scientific Reports.

Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy

S. Banerjee, T. Pramanik, L. Colombo, 2013 .

van der Waals Heterostructures with High Accuracy Rotational Alignment.

S. Banerjee, S. Larentis, Kenji Watanabe, 2016, Nano letters.

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

S. Banerjee, A. Rai, Hema C P Movva, 2018, Crystals.

Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors

S. Banerjee, A. Rai, Sangwoo Kang, 2016 .

Large effective mass and interaction-enhanced Zeeman splitting of K -valley electrons in MoSe 2

S. Banerjee, S. Larentis, Kenji Watanabe, 2018, 1804.10104.

Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility.

S. Banerjee, S. Larentis, Kenji Watanabe, 2016, Physical review letters.

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors.

S. Banerjee, Kenji Watanabe, T. Taniguchi, 2016, Nano letters.

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

S. Banerjee, S. Larentis, Kenji Watanabe, 2014, Nano letters.

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

S. Banerjee, T. Pramanik, A. Rai, 2017, 1705.03121.

In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces.

S. Banerjee, J. Park, A. Kummel, 2015, Nano letters.

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

Amritesh Rai, Takashi Taniguchi, Kenji Watanabe, 2017, ACS nano.

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

Amritesh Rai, Takashi Taniguchi, Kenji Watanabe, 2015, ACS nano.

Intra-domain periodic defects in monolayer MoS2

S. Banerjee, T. Pramanik, E. Tutuc, 2017, 1705.03051.

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

Amritesh Rai, Anupam Roy, Emanuel Tutuc, 2015, Nano letters.

Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications

S. Banerjee, X. Wu, A. Valsaraj, 2017 .

Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

S. Banerjee, R. Ghosh, R. Rao, 2015 .

Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}.

S. Banerjee, S. Larentis, Kenji Watanabe, 2018, Physical review letters.

Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

S. Banerjee, J. Robertson, A. Javey, 2017, Science Advances.

Stress-induced bandgap renormalization in atomic crystals

S. Banerjee, D. Snoke, J. Beaumariage, 2019, Solid State Communications.

ReS2-based interlayer tunnel field effect transistor

Omar B. Mohammed, S. Banerjee, Kenji Watanabe, 2017 .

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors.

S. Banerjee, Wei Li, D. Akinwande, 2019, Nano letters.

Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures.

S. Larentis, Kenji Watanabe, T. Taniguchi, 2018, Nano letters.

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

Carl W. Magnuson, S. Banerjee, R. Ruoff, 2014 .

Accelerated Carrier Recombination by Grain Boundary/Edge Defects in MBE Grown Transition Metal Dichalcogenides

S. Banerjee, A. Rai, A. Roy, 2018, 1801.02220.

van der Waals Heterostructures with High Accuracy Rotational Alignment.

S. Banerjee, S. Larentis, T. Taniguchi, 2016, Nano letters.

High density nonmagnetic cobalt in thin films

B. Satpati, Surendra Singh, A. Roy, 2017, Nanotechnology.

Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency

D. Akinwande, Carl W. Magnuson, D. Akinwande, 2012, IEEE Transactions on Nanotechnology.

Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons.

Md. Hasibul Alam, B. Satpati, Sayema Chowdhury, 2024, ACS applied materials & interfaces.

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors.

S. Banerjee, T. Taniguchi, L. F. Register, 2016, Nano letters.