I. V. Tunitskaya

发表

Band offsets in heterojunctions of InGaAsSb/AlGaAsSb

A. G. Milnes, A. V. Govorkov, A. Milnes, 1995 .

The properties of heavily compensated high resistivity GaSb crystals

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

Ion implantation effects in GaSb

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb

S. Pearton, A. Milnes, A. Polyakov, 1994 .

Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

A. Milnes, A. Polyakov, N. Smirnov, 1993 .