Mei Wu

发表

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Y. Hao, Xiao-hua Ma, Minhan Mi, 2022, Applied Physics Letters.

Threshold Voltage Instability (PBTI) of GaN-Based Recessed MOS-HEMTs with Fast-IV-Sweep Method

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors

Xiao-hua Ma, Minhan Mi, Ling Yang, 2019, Japanese Journal of Applied Physics.

Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement

Y. Hao, Xiao-hua Ma, Ling Yang, 2019, Japanese Journal of Applied Physics.

Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2018, IEEE Transactions on Electron Devices.

Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si $\delta$ -Doped AlGaN/GaN:C HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Transactions on Electron Devices.

Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Y. Hao, Xiao-hua Ma, Bin Hou, 2019, Applied Physics Letters.

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

K. Cheng, Xiao-hua Ma, P. Wang, 2022, Applied Physics Letters.

A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Electron Device Letters.

Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, Journal of Physics D: Applied Physics.

Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT

Xiao-hua Ma, Bin Hou, Fang Song, 2022, IEEE Transactions on Electron Devices.

Active Thermal Management of GaN-on-SiC HEMT With Embedded Microfluidic Cooling

Xiao-hua Ma, Xuefeng Zheng, Binbin Jiao, 2022, IEEE Transactions on Electron Devices.

Experimental assessment of self-heating in AlGaN/GaN HEMTs for microwave application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

Y. Hao, Xiao-hua Ma, Chunfu Zhang, 2019, physica status solidi (a).

Transducer-Less Thermoreflectance Technique for Measuring Thermal Properties of the Buried Buffer Layer and Interface in GaN-based HEMTs

Xiao-hua Ma, Ling Yang, Mei Wu, 2022, ACS Applied Electronic Materials.

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).