H. Cho

Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes

E. Suh, T. Cuong, T. Seo, 2021, Applied Sciences.

Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning

M. Kneissl, M. Weyers, S. Einfeldt, 2018, IEEE Photonics Technology Letters.

Highly Efficient Deep Blue Cd-Free Quantum Dot Light-Emitting Diodes by a p-Type Doped Emissive Layer.

Y. Jung, D. Jeon, Jaehyun Park, 2020, Small.

High power UVB light emitting diodes with optimized n-AlGaN contact layers

M. Weyers, A. Knauer, S. Einfeldt, 2019, Japanese Journal of Applied Physics.

Effect of Ridge Growth on Wafer Bowing and Light Extraction Efficiency of Vertical GaN-Based Light-Emitting Diodes

E. Suh, J. Kang, S. Chandramohan, 2010 .

Improved Efficiency of Ultraviolet B Light‐Emitting Diodes with Optimized p‐Side

M. Weyers, A. Knauer, S. Einfeldt, 2020, physica status solidi (a).

Surface wrinkle formation by liquid crystalline polymers for significant light extraction enhancement on quantum dot light-emitting diodes.

Y. Jung, Hyunsu Cho, Jun‐Hee Na, 2020, Optics express.

Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer

Sun-Kyung Kim, Hong-Gyu Park, H. Park, 2008 .