Yichuan Zhang

发表

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

Xiao-hua Ma, S. Zhang, Sen Huang, 2019, Applied Physics Letters.

Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

Sen Huang, Xinyu Liu, S. Zhang, 2021, IEEE Transactions on Electron Devices.

Effect of SiN:Hx passivation layer on the reverse gate leakage current in GaN HEMTs

Xiao-hua Ma, Sen Huang, Xinyu Liu, 2018, Chinese Physics B.

Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

Sulin Zhang, Sen Huang, Xinyu Liu, 2020, IEEE Electron Device Letters.

High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz

Sen Huang, Xinyu Liu, Xinhua Wang, 2018, IEEE Electron Device Letters.

Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Kevin J. Chen, Xinyu Liu, Sen Huang, 2019, Journal of Applied Physics.

Improved Stability of GaN MIS-HEMT With 5-nm Plasma-Enhanced Atomic Layer Deposition SiN Gate Dielectric

Xinyu Liu, Xinhua Wang, K. Wei, 2022, IEEE Electron Device Letters.

Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs

Sen Huang, Xinyu Liu, Xinhua Wang, 2020 .

7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer

Xinyu Liu, Sen Huang, Xinhua Wang, 2021, IEEE Electron Device Letters.

Improved breakdown characteristic of AlGaN/GaN HEMTs with a width gradient recessed dual-gate structure

Xinyu Liu, K. Wei, Yichuan Zhang, 2022, Semiconductor Science and Technology.