S. M. Dinara

发表

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

S. K. Jana, D. Biswas, S. M. Dinara, 2017 .

Comparative study on hydrostatic strain, stress and dislocation density of Al0.3Ga0.7N/GaN heterostructure before and after a-Si3N4 passivation

D. Biswas, S. M. Dinara, Saptarsi Ghosh, 2015 .

Synthesis of a 3D free standing crystalline NiSex matrix for electrochemical energy storage applications.

Aneeya K. Samantara, S. Nayak, D. Late, 2019, Dalton transactions.

Self-supported two-dimensional NiCo2S4 micro-spheres for ultra-high supercapacitor application via two-step methods: Electro-deposition and chemical vapor deposition

Aneeya K. Samantara, S. Nayak, C. Rout, 2020 .

Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode

D. Biswas, Subhashis Das, S. M. Dinara, 2014, 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE).

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

S. K. Jana, D. Biswas, Subhashis Das, 2016 .

An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

S. K. Jana, D. Biswas, S. M. Dinara, 2014 .

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Rahul Kumar, D. Biswas, S. M. Dinara, 2014, Proceedings of the 2014 IEEE Students' Technology Symposium.

Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate

T. D. Das, S. M. Dinara, S. Jana, 2015 .

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Rahul Kumar, D. Biswas, S. M. Dinara, 2015 .

Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

Rahul Kumar, D. Biswas, S. M. Dinara, 2016 .

Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

D. Biswas, S. M. Dinara, Saptarsi Ghosh, 2014 .

Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy

Soumen Das, D. Biswas, S. M. Dinara, 2015 .

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

S. K. Jana, D. Biswas, Subhashis Das, 2018, IEEE Transactions on Electron Devices.