Saptarsi Ghosh

发表

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

S. K. Jana, D. Biswas, S. M. Dinara, 2017 .

Comparative study on hydrostatic strain, stress and dislocation density of Al0.3Ga0.7N/GaN heterostructure before and after a-Si3N4 passivation

D. Biswas, S. M. Dinara, Saptarsi Ghosh, 2015 .

Effect of Si3N4 Passivation on the Acetone Sensing Performance of Pd/AlGaN/GaN Heterostructure

S. Sharma, D. Biswas, Subhashis Das, 2017, Springer Proceedings in Physics.

Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE

Nripendra N. Halder, S. K. Jana, Saptarsi Ghosh, 2014, IEEE Transactions on Nanotechnology.

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

A. Dabiran, P. Chow, E. Chang, 2014, Journal of Electronic Materials.

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

S. K. Jana, Rahul Kumar, D. Biswas, 2014 .

Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study

S. K. Jana, Rahul Kumar, D. Biswas, 2014 .

Acetone Adsorption Characteristics of Pd/AlGaN/GaN Heterostructure Grown by PAMBE: A Kinetic Interpretation at Low Temperature

S. Sharma, D. Biswas, Subhashis Das, 2018, 2018 IEEE SENSORS.

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

D. Biswas, Subhashis Das, Saptarsi Ghosh, 2017 .

Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

Rahul Kumar, D. Biswas, Subhashis Das, 2016 .

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

S. K. Jana, D. Biswas, Subhashis Das, 2016 .

Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

M. Dawson, B. Guilhabert, M. Strain, 2022, 2208.05275.

An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs

S. K. Jana, D. Biswas, S. M. Dinara, 2014 .

Studies on magnetic damping due to pinned domain wall motion (II)

S. Bera, Saptarsi Ghosh, 1979 .

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Rahul Kumar, D. Biswas, S. M. Dinara, 2014, Proceedings of the 2014 IEEE Students' Technology Symposium.

Fabrication and transfer printing basedintegration of free-standing GaN membranemicro-lenses onto semiconductor chips

M. Dawson, B. Guilhabert, M. Strain, 2022, Optical Materials Express.

Integration of single GaN micro-lenses with high index semiconductors by transfer printing

M. Dawson, B. Guilhabert, M. Strain, 2022, 2022 Conference on Lasers and Electro-Optics (CLEO).

Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon

D. Biswas, Saptarsi Ghosh, P. Mukhopadhyay, 2015 .

Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE

D. Biswas, Subhashis Das, Saptarsi Ghosh, 2014, Proceedings of the 2014 IEEE Students' Technology Symposium.

Magnetization and magnetoresistance of Ni/nanoporous-GaN composites

Y. Calahorra, S. Kar‐Narayan, A. Gundimeda, 2021 .

Magnetization and magnetoresistance of infiltrated and coated porous-GaN/nickel composites

Y. Calahorra, S. Kar‐Narayan, A. Gundimeda, 2021 .

Advanced Transfer Printing With In-Situ Optical Monitoring for the Integration of Micron-Scale Devices

M. Dawson, B. Guilhabert, M. Strain, 2023, IEEE Journal of Selected Topics in Quantum Electronics.

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Rahul Kumar, D. Biswas, S. M. Dinara, 2015 .

A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0)

Rahul Kumar, P. Banerji, D. Biswas, 2015 .

Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD

D. Wallis, R. Oliver, S. Alam, 2023, Semiconductor Science and Technology.

Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy

Dhrubes Biswas, Rahul Kumar, Rahul Kumar, 2017, IEEE Transactions on Electron Devices.

Strong photoluminescence in ammonia plasma treated amorphous‐SiC thin films deposited by laser ablation

D. N. Bose, P. Bhattacharya, Saptarsi Ghosh, 1996 .

Complications in silane-assisted GaN nanowire growth

H. Joyce, R. Oliver, S. Fairclough, 2023, Nanoscale advances.

Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers

Gavin W. Morley, M. Dawson, M. Strain, 2023, ACS photonics.

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

A. Eblabla, K. Elgaid, D. Wallis, 2021, ACS applied electronic materials.

Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening

S. K. Jana, Rahul Kumar, D. Biswas, 2015, Electronic Materials Letters.

A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

Subir Kumar Sarkar, Sanjoy Deb, Saptarsi Ghosh, 2011 .

Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

Rahul Kumar, D. Biswas, S. M. Dinara, 2016 .

Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

D. Biswas, S. M. Dinara, Saptarsi Ghosh, 2014 .

Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy

Soumen Das, D. Biswas, S. M. Dinara, 2015 .

Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique

D. Biswas, Saptarsi Ghosh, P. Mukhopadhyay, 2018 .

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

S. K. Jana, D. Biswas, Subhashis Das, 2018, IEEE Transactions on Electron Devices.

Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide.

D. Wallis, R. Oliver, M. Kappers, 2023, Ultramicroscopy.

Magnetic Properties of Nickel Electrodeposited on Porous Gan Substrates with Infiltrated and Laminated Connectivity

Y. Calahorra, S. Kar‐Narayan, A. Gundimeda, 2021, SSRN Electronic Journal.

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

S. K. Jana, Rahul Kumar, D. Biswas, 2014 .