Y. Nakao

Low Interface Trap Density and High Breakdown Electric Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

T. Ohmi, S. Sugawa, A. Teramoto, 2013, IEEE Transactions on Electron Devices.

Low-Interface-Trap-Density and High-Breakdown-Electric-Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

T. Ohmi, S. Sugawa, A. Teramoto, 2013, IEEE Transactions on Electron Devices.

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2009 .

Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal–insulator–silicon field-effect transistors

T. Ohmi, S. Sugawa, A. Teramoto, 2014 .

Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2011 .

Erratum: “Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species”

T. Ohmi, T. Hattori, H. Nohira, 2013 .