Chihoko Mizue

发表

Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

T. Hashizume, Y. Hori, Chihoko Mizue, 2010 .

Interface state characterization of ALD‐Al2O3/GaN and ALD‐Al2O3/AlGaN/GaN structures

T. Hashizume, Y. Hori, Chihoko Mizue, 2012 .

The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

T. Hashizume, Chihoko Mizue, B. Adamowicz, 2011 .

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

T. Hashizume, D. Gregušová, R. Stoklas, 2010 .

Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor

T. Hashizume, T. Kachi, T. Uesugi, 2008 .

UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure

T. Hashizume, J. Kotani, Chihoko Mizue, 2009 .

Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

T. Hashizume, Y. Hori, Chihoko Mizue, 2011 .

Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

T. Hashizume, Chihoko Mizue, B. Adamowicz, 2010 .

Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures

T. Hashizume, Chihoko Mizue, B. Adamowicz, 2009 .

Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors

Tamotsu Hashizume, T. Hashizume, Boguslawa Adamowicz, 2008 .