D. Braddock

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

D. Barlage, K. Dandu, Y. Saripalli, 2005, IEEE Microwave and Wireless Components Letters.

Pulsed-IV and RF waveform measurements of unique high-K dielectric GaN MOSFETs

P. Tasker, J. Benedikt, C. Roff, 2008, 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems.

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

D. Barlage, Mark L. Johnson, C. Zeng, 2006 .

Transmission Electron Microscopy Study of an Epitaxial Gate Oxide on III-N Semiconductor Structures

D. Barlage, Mark L. Johnson, Y. Saripalli, 2004 .

Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

M. Passlack, S. Zollner, R. Gregory, 2004 .

Current conduction processes in high-κ Gd0.31Ga0.1O0.59/Ga2O3 gate dielectric stacks on GaAs

M. Passlack, D. Braddock, N. Medendorp, 2004 .

Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

M. Passlack, R. Gregory, D. Braddock, 2003 .