G. Heidelberger

High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

H. Lüth, P. Kordos, A. Fox, 2005 .

RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs

P. Kordos, A. Fox, M. Marso, 2006, 2006 International Conference on Advanced Semiconductor Devices and Microsystems.

The growth mechanism of GaN with different H2/N2 carrier gas ratios

Y. S. Cho, H. Lüth, H. Hardtdegen, 2007 .

Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric

H. Luth, P. Kordos, A. Fox, 2006, 2006 International Conference on Advanced Semiconductor Devices and Microsystems.

SiO2∕AlGaN∕GaN MOSHFET with 0.7 [micro sign]m gate-length and fmax∕fT of 40∕24 GHz

H. Lüth, D. Gregušová, P. Kordos, 2005 .

Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide

Peter Kordos, Michel Marso, G. Heidelberger, 2007 .

New approaches for growth control of GaN-based HEMT structures

Y. S. Cho, H. Hardtdegen, M. Marso, 2007 .

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

A. Fox, M. Marso, P. Kordos, 2006, IEEE Transactions on Electron Devices.

An AlGaN/GaN two‐color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

H. Lüth, A. Fox, M. Marso, 2006 .

Performance evaluation of power control algorithms in cellular UTRA systems

I. Forkel, P. Seidenberg, R. Pabst, 2001 .