A. Herrero

发表

Improved oxide passivation of AlGaN∕GaN high electron mobility transistors

R. M. Frazier, F. Ren, S. Pearton, 2005 .

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

K. Bertness, N. Sanford, A. Sanders, 2012, Nanotechnology.

Toward Discrete Axial p–n Junction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

J. Schlager, V. Bright, K. Bertness, 2013, Journal of Electronic Materials.

Improved Au Schottky contacts on GaAs using cryogenic metal deposition

F. Ren, S. Pearton, S. Jang, 2006 .

Analysis of contact interfaces for single GaN nanowire devices.

K. Bertness, P. Blanchard, A. Herrero, 2013, Journal of visualized experiments : JoVE.

Optimization of surface pretreatment for single GaN nanowire devices

K. Bertness, A. Herrero, 2012 .

Environmental stability of candidate dielectrics for GaN-based device applications

F. Ren, S. Pearton, C. Abernathy, 2009 .

Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K

F. Ren, S. Pearton, B. Kang, 2007 .

New Dielectrics for Gate Oxides and Surface Passivation on GaN

B. S. Kang, F. Ren, S. Pearton, 2005, 2005 International Semiconductor Device Research Symposium.

Growth of Scandium Magnesium Oxide on GaN

F. Ren, S. Pearton, C. Abernathy, 2003 .

Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition

C. Abernathy, B. Gila, V. Craciun, 2008 .

Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition

C. Abernathy, B. Gila, V. Craciun, 2008 .

Epitaxial growth of Sc2O3 films on GaN

F. Ren, S. Pearton, C. Abernathy, 2006 .