J. K. Wang

发表

Evaluation of logic SER for a network processor and the use of targeted hardening to improve system SER performance

B. Narasimham, S. Risch, J. K. Wang, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

SRAM PUF quality and reliability comparison for 28 nm planar vs. 16 nm FinFET CMOS processes

Dan Reed, Balaji Narasimham, Saket Gupta, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Impact of Technology Scaling on SRAM Soft Error Rates

B. L. Bhuva, B. Narasimham, N. N. Mahatme, 2014, IEEE Transactions on Nuclear Science.

Jointly-Developed Novel Torque Transducer Ensures Jack-up Rig Integrity

J. W. Wu, M. Cooper, J. K. Wang, 2015 .

Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs

Balaji Narasimham, Saket Gupta, J. K. Wang, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

A novel pad conditioning disk design of tungsten chemical mechanical polishing process for deep sub-micron device yield improvement

T. E. Hsieh, J. K. Wang, K. Y. Lo, 2001, 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203).

Structural acoustic response reduction of a fluid-loaded beam using unequally-spaced concentrated masses

J. K. Wang, C. C. Cheng, C. C. Cheng, 1998 .

Transient Dynamic Analysis of the Drillstring Under Jarring Operations by the FEM

Kalsi, J. K. Wang, U. Chandra, 1987 .

An improved gate valve for critical applications in nuclear power plants

Kalsi, J. K. Wang, P. D. Alvarez, 1996 .

Optimized process for tungsten chemical-mechanical planarization throughput improvement

J. K. Wang, T. C. Wang, Y. L. Wang, 2000, Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130).

Improvements in motor operated gate valve design and prediction models for nuclear power plant systems. SBIR Phase 1, Final report, September 1990--April 1991

Kalsi, J. K. Wang, 1992 .

Electron-Induced Single-Event Upsets in Static Random Access Memory

J. K. Wang, peixiong zhao, R. Reed, 2013, IEEE Transactions on Nuclear Science.

Temperature dependence of soft-error rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies

J. S. Kauppila, D. R. Ball, L. W. Massengill, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

A Hysteresis-Based D-Flip-Flop Design in 28 nm CMOS for Improved SER Hardness at Low Performance Overhead

J. S. Kauppila, B. L. Bhuva, B. Narasimham, 2012, IEEE Transactions on Nuclear Science.

Cool thermal discharge obtained with air flowing over melting ice by complete removal of melt

Ho-Ming Yeh, J. K. Wang, Chii-Dong Ho, 2000 .

Critical drying technology for deep submicron processes

J. K. Wang, J. Hu, S. Puri, 1998 .

Single-Event Charge Collection and Upset in 40-nm Dual- and Triple-Well Bulk CMOS SRAMs

B. L. Bhuva, B. Narasimham, N. N. Mahatme, 2011, IEEE Transactions on Nuclear Science.

Effects of charge confinement and angular strikes in 40 nm dual- and triple-well bulk CMOS SRAMs

B. L. Bhuva, B. Narasimham, R. D. Schrimpf, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).