D. Pham

Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy mode

C. Shih, H. Celio, M. José-Yacamán, 2006 .

Strain measurement of Fin structure using TEM objective lens dark-field off-axis holography

Z. Mai, A. Du, S. P. Zhao, 2013, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy

J. Federici, H. Altan, H. Grebel, 2007 .

Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

C. Shih, H. Celio, M. José-Yacamán, 2007 .