T. J. Mattord

发表

Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3

S. Banerjee, A. Holmes, J. Campbell, 2006 .

Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides

A. Holmes, J. Harris, S. Bank, 2005 .

Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma

A. Holmes, S. Govindaraju, B. Streetman, 2000 .

Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems

A. Holmes, D. Deppe, O. Shchekin, 2005 .

Inert gas maintenance for molecular-beam epitaxy systems

A. Holmes, D. Deppe, O. Shchekin, 2005 .

High-efficiency V-band GaAs IMPATT diodes

L. Erickson, T. Trinh, T. J. Mattord, 1984 .

Growth of Al0.3Ga0.7As by molecular beam epitaxy in the forbidden temperature range using As2

R. Fischer, H. Morkoç, L. Erickson, 1983 .