J. Reifsnider

发表

Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3

S. Banerjee, A. Holmes, J. Campbell, 2006 .

Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy

A. Holmes, J.C. Campbell, S. Wang, 2000, IEEE Journal of Quantum Electronics.

Critical RF damage conditions for the plasma-assisted molecular beam epitaxy growth of GaInNAs with dilute N2/Ar gas mix

A. Holmes, S. Govindaraju, M. Oye, 2005 .

Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides

A. Holmes, J. Harris, S. Bank, 2005 .

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

A. Holmes, S. Govindaraju, M. Oye, 2004 .

MBE Regrowth Over a Selectively Undercut GaAs Masking Layer

D. Deppe, B. Streetman, H. Deng, 1994 .

Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes

A. Holmes, J. Campbell, S. Govindaraju, 2001 .

Improved quality GaN films grown by molecular beam epitaxy on sapphire

A. Holmes, B. Streetman, D. Gotthold, 1998 .

Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum wells with GaNAs barriers and GaAs spacer layers

A. Holmes, S. Govindaraju, M. Oye, 2005 .

Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems

A. Holmes, D. Deppe, O. Shchekin, 2005 .

Inert gas maintenance for molecular-beam epitaxy systems

A. Holmes, D. Deppe, O. Shchekin, 2005 .

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

R. Ritzenthaler, A. Chasin, B. O’Sullivan, 2023, Micromachines.