C. Ling

发表

Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices

Miin-Jang Chen, Chun-Yuan Wang, J. Shyue, 2022, Applied Surface Science.

Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films

F. C. Loh, W. K. Choi, K. L. Tan, 1995 .

Analysis of the variation in the field‐dependent behavior of thermally oxidized tantalum oxide films

W. K. Choi, C. Ling, 1994 .

A new multiple-function logic family

Y. Lim, C. Ling, Y. Tan, 1989, IEEE International Symposium on Circuits and Systems,.

Structural properties of amorphous silicon carbide films by plasma‐enhanced chemical vapor deposition

Y. P. Lee, W. K. Choi, K. L. Tan, 1995 .

Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation

J. Yang, J. Shyue, Chun-Yi Chou, 2022, Surfaces and Interfaces.

Quasi-Fermi level variation in the space-charge region of a grain boundary

T. M. Tay, C. Ling, C. Kwok, 1985 .

Dielectric Constant Enhancement and Leakage Current Suppression of Metal–Insulator–Metal Capacitors by Atomic Layer Annealing and the Capping Layer Effect Prepared with a Low Thermal Budget

Chun-Yuan Wang, Hsin-Chih Lin, Chun-Yi Chou, 2023, ACS Applied Electronic Materials.

Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices

J. Shyue, C. Ling, Miin-Jang Chen, 2023, Journal of Materials Chemistry C.