S. Guggilla

Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

Bin Yu, Qi Xiang, J. Pan, 2003, IEEE Electron Device Letters.

Physical vapor deposited AlN as scalable and reliable interconnect etch-stop ≤ 10nm node

M. Naik, He Ren, S. Kesapragada, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Ambient temperature synthesis and magnetic properties of aluminum borate—Fe nanocomposites

A. Manthiram, S. Guggilla, 1996 .

Synthesis, Crystal Chemistry, and Electrical Properties of the Intergrowth Oxides Sr4−xCaxFe6−yCoyO13+δ

A. Manthiram, T. Armstrong, S. Guggilla, 1999 .

Oxygen permeation studies of Sr4Fe6−xCoxO13

A. Manthiram, T. Armstrong, S. Guggilla, 1999 .

Crystal chemical characterization of the mixed conductor Sr(Fe,Co){sub 1.5}O{sub y} exhibiting unusually high oxygen permeability

A. Manthiram, S. Guggilla, 1997 .

Crystal Chemical Characterization of the Mixed Conductor Sr(Fe, Co)1. 5Oy Exhibiting Unusually High Oxygen Permeability.

A. Manthiram, S. Guggilla, 1997 .

Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects

J. Y. Lee, F. H. Baumann, A. H. Simon, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).