N. Sandler

发表

The Development of Zero-temperature-gradient Zero-bias Thermally Stimulated Current (ZTGZBTSC) Spectroscopy Technique for the Detection of Defect States in Ultra-thin High-k Dielectric Films

Kum Fai. Wong, W. Lau, Taejoon Han, 2006 .

Application of zero-temperature-gradient zero-bias thermally stimulated current spectroscopy to ultrathin high-dielectric-constant insulator film characterization

W. Lau, Taejoon Han, N. Sandler, 2006 .

Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysilicon

G. Lo, D. Kwong, P. Fazan, 1993, IEEE Electron Device Letters.

Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy

L. L. Leong, W. Lau, Taejoon Han, 2003 .

Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

J. Autran, R. Devine, C. Chaneliere, 1998 .

Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing

W. Lau, Taejoon Han, N. Sandler, 2006 .

Low‐Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursor

A. Lane, W. Kern, H. Treichel, 1992 .

Deposition, annealing and characterisation of high‐dielectric‐constant metal oxide films

A. Lane, G. Tempel, W. Kern, 1995 .

Evidence that N2O is a Stronger Oxidizing Agent than O2 for the Post-Deposition Annealing of Ta2O5 on Si Capacitors

Paul K. Chu, W. S. Lau, Nathan P. Sandler, 1997 .

Aligned Silk Sponge Fabrication and Perfusion Culture for Scalable Proximal Tubule Tissue Engineering.

D. Kaplan, N. Sandler, S. Szymkowiak, 2021, ACS applied materials & interfaces.

Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si

W. S. Lau, C. H. Tung, P. W. Qian, 2007, Microelectron. Reliab..

Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping

W. Lau, N. Sandler, P. Babu, 2007 .

The Superiority of N 2O Plasma Annealing over O 2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta 2O 5) Films

Paul K. Chu, W. S. Lau, Taejoon Han, 1998 .

Tantalum pentoxide for advanced DRAM applications

N. Sandler, K. A. McKinley, N. P. Sandler, 1996 .

Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications

W. Lau, N. Sandler, B. S. Page, 1995 .

Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

P. Chu, W. Lau, N. Sandler, 1996 .

A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy

Paul K. Chu, W. S. Lau, Nathan P. Sandler, 1996 .

Two Step O 2 /N 2 O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta 2 O 5 Films

T. Chong, P. Chu, C. Tung, 1999 .

Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy

Tow Chong Chong, Allen Lee, C. H. See, 1997 .

MOCVD OF TANTALUM PENTOXIDE FOR LARGE-AREA ULSI CIRCUIT WAFERS

W. Kern, N. Sandler, A. Chen, 1991 .