R. Worley

IIB-5 practical limitations of gate-oxide thickness minimization in the MOSFET

Yu-Pin Han, J. Mize, B. Moore, 1983, IEEE Transactions on Electron Devices.

Growth and properties of n- and p-type ZnO

D. C. Reynolds, D. Look, B. Claflin, 2003, 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767).

Ultra-thin gate-oxide characteristics and MOS/VLSI scaling implications

J. Mize, J. Pinto, R. Worley, 1982, 1982 International Electron Devices Meeting.

Statistical analysis of GaAs MESFET S-parameter equivalent-circuit models

R. Anholt, R. Worley, R. Neidhard, 1991 .