A. Fontserè

发表

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

A. Pérez‐Tomás, A. Fontserè, 2011 .

Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

M. Placidi, Y. Cordier, S. Chenot, 2013 .

Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

P. Godignon, J. M. Rafí, G. Pellegrini, 2018 .

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs

Philippe Godignon, Peter Moens, Amador Pérez-Tomás, 2012, Microelectron. Reliab..

Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

M. Placidi, Y. Cordier, S. Chenot, 2012 .

Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

M. Placidi, Y. Cordier, S. Chenot, 2012 .

Deposited Thin SiO2 for Gate Oxide on n-Type and p-Type GaN

P. Godignon, M. Placidi, N. Mestres, 2010 .

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

Marc Porti, Montserrat Nafría, J. Llobet, 2012 .

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

M. Placidi, Y. Cordier, S. Chenot, 2011 .

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

M. Lanza, M. Porti, M. Nafría, 2012, Nanotechnology.

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

M. Porti, M. Nafría, M. Placidi, 2015, Nanotechnology.

Custom sample environments at the ALBA XPEEM.

L. Aballe, M. Foerster, E. Pellegrin, 2016, Ultramicroscopy.

Water/methanol solutions characterized by liquid μ-jet XPS and DFT—The methanol hydration case

C. Escudero, V. Pérez-Dieste, J. Fraxedas, 2019, Journal of Molecular Liquids.

Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

Marc Porti, Montserrat Nafría, J. Llobet, 2011 .

Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

Amador Pérez-Tomás, Michael R. Jennings, Peter M. Gammon, 2013 .

Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

M. Placidi, P. Gammon, M. Jennings, 2013 .

Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN

Amador Pérez-Tomás, M. R. Jennings, Abel Fontserè, 2011, Microelectron. Reliab..

10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

J. M. Rafí, D. Quirion, S. Hidalgo, 2017 .

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

M. Porti, M. Nafría, M. Placidi, 2015, Nanotechnology.

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

J. Llobet, Amador Pérez-Tomás, Sébastien Chenot, 2013 .