S.E. Kim

A novel robust TiN/AHO/TiN capacitor and CoSi/sub 2/ cell pad structure for 70nm stand-alone and embedded DRAM technology and beyond

H.S. Kim, J.M. Park, Y.S. Hwang, 2002, Digest. International Electron Devices Meeting,.

130 nm-technology, 0.25 μm2, 1T1C FRAM cell for SoC (system-on-a-chip)-friendly applications

S.Y. Lee, H.S. Kim, E.S. Lee, 2007, 2007 IEEE Symposium on VLSI Technology.

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

Y.S. Lee, J.M. Park, Y.S. Hwang, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..