Hirofumi Namizaki

发表

Low-threshold high-efficiency 1.55-µm distributed feedback p-substrate partially inverted buried heterostructure laser diode

Akira Takemoto, Y. Sakakibara, Y. Nakajima, 1988 .

New approach to the frequency response analysis of InGaAs avalanche photodiodes

Hirofumi Namizaki, Wataru Susaki, K. Takahashi, 1988 .

1.8-inch poly-Si TFT-LCDs with novel TFT structure and storage capacitance arrangement

Takashi Sugawara, Kazuhiro Kobayashi, Masahiro Nunoshita, 1993, Electronic Imaging.

High-coupled-power high-speed 1.3-µm edge-emitting LED with a buried crescent structure on p-InP substrate

Shogo Takahashi, K. Yoshida, E. Omura, 1988 .

InGaAsP/InP buried crescent laser diode (λ = 1.3 µm) with very low threshold current and fundamental transverse mode

Hirofumi Namizaki, Wataru Susaki, E. Oomura, 1981 .

Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits

H. Uesugi, Shogo Takahashi, E. Omura, 1990, Photonics West - Lasers and Applications in Science and Engineering.

Extremely Low Threshold InGaAsP DFB Laser Diode By The MOCVD/LPE

S. Kakimoto, Hirofumi Namizaki, Wataru Susaki, 1989, Photonics West - Lasers and Applications in Science and Engineering.

High-power high-reliability operation of 1.3-μm p-substrate buried crescent laser diodes

Y. Sakakibara, Y. Nakajima, Hirofumi Namizaki, 1987 .

Current dependence of spontaneous carrier lifetimes in GaAs–Ga1‐xAlx As double‐heterostructure lasers

Hirofumi Namizaki, Hirofumi Kan, Makoto Ishii, 1974 .

A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure

Masahiro Nunoshita, Takashi Sugawara, Hirofumi Namizaki, 1993 .

Extremely low threshold 1.3 mu m DFB-PPIBH laser diode applied to 1 Gbit/sec zero-bias RZ modulation

Y. Ohkura, Hirofumi Namizaki, A. Takemoto, 1988 .

High-power high-reliability operation of 1.3 µm p-substrate buried crescent laser diodes

Y. Kokubo, Hirofumi Namizaki, S. Kakimoto, 1987 .

1.3μm InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode

Akira Takemoto, M. Fujiwara, Hirofumi Namizaki, 1987 .

Stress compensation in laser diodes

Satoru Kawazu, Hiroshi Koyama, Hirofumi Namizaki, 1983 .

Transverse‐junction‐stripe‐geometry double‐heterostructure lasers with very low threshold current

M. Ishii, Hirofumi Namizaki, H. Namizaki, 1974 .

Dark current and diffusion length in InGaAs photodiodes grown on GaAs substrates

Hirofumi Namizaki, E. Ishimura, Tatsuya Kimura, 1990 .

Screening of long-wavelength laser at high temperature and high current levels

Ryoichi Hirano, Hirofumi Namizaki, Wataru Susaki, 1983 .

Operating characteristics and elevated temperature lifetests of focused ion beam micromachined transverse junction stripe lasers

E. Omura, Hirofumi Namizaki, J. Puretz, 1988 .