I. Hawkins

发表

AT 2016dah and AT 2017fyp: the first classical novae discovered within a tidal stream

M. Kasliwal, M. Shara, M. Darnley, 2020, Monthly Notices of the Royal Astronomical Society.

Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon

V. Markevich, A. Peaker, L. Dobaczewski, 2001 .

A. Peaker, C. Jeynes, J. Terry, 2000 .

Methods of Modelling the C-V Profiles of Arbitrary Homopolar Heterostructures

B. Hamilton, A. Peaker, J. Rimmer, 1989 .

Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS

V. Markevich, A. Peaker, L. Dobaczewski, 2009 .

Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy

P. Hurley, V. Markevich, A. Peaker, 2008 .

Hole trapping in self-assembled SiGe quantum nanostructures

A. Peaker, I. Berbezier, A. Ronda, 2003 .

Laplace transform deep level transient spectroscopy: new insight into defect microscopy

A. Peaker, L. Dobaczewski, I. Hawkins, 1995 .

A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium

A. Peaker, J. Evans-Freeman, P. Dawson, 2001 .

Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon

A. Peaker, J. Evans-Freeman, P. Dawson, 2001 .

Separation of dislocation- and erbium-related photoluminescence by time resolved studies

A. Peaker, J. Evans-Freeman, P. Dawson, 2001 .

Vacancy-group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

V. V. Emtsev, V. V. Litvinov, K. Emtsev, 2004 .

Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

V. Markevich, A. Peaker, R. Falster, 2021, physica status solidi (a).

Passivation of thermally-induced defects with hydrogen in float-zone silicon

V. Markevich, A. Peaker, J. T. D. de Guzman, 2021, Journal of Physics D: Applied Physics.

Recombination via transition metals in solar silicon: The significance of hydrogen–metal reactions and lattice sites of metal atoms

V. Markevich, A. Peaker, J. D. Murphy, 2017 .

Capacitance and conductance deep level transient spectroscopy in field‐effect transistors

Anthony R. Peaker, I. D. Hawkins, A. Peaker, 1986 .

Laplace deep level transient spectroscopy: Embodiment and evolution

V. Markevich, B. Hamilton, A. Peaker, 2012 .

Slow decay of photoconductivity caused by tin-related DX centers in AlGaAs

K. Žďánský, I. Hawkins, 1999 .

Anthony R. Peaker, I. D. Hawkins, V. P. Markevich, 2005 .

Vacancy–oxygen complex in Ge crystals

V. V. Litvinov, S. V. Vetrov, V. Markevich, 2003 .

Electronic properties of vacancy–oxygen complex in Ge crystals

V. V. Litvinov, V. Markevich, A. Peaker, 2002 .

Laplace transform deep‐level transient spectroscopic studies of defects in semiconductors

A. Peaker, L. Dobaczewski, P. Kaczor, 1994 .

Piezospectroscopic analysis of mobile defects in semiconducting materials

V. Markevich, A. Peaker, L. Dobaczewski, 2008 .

Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

V. Markevich, A. Peaker, S. Lastovskii, 2019, Journal of Applied Physics.

Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

A. Peaker, A. Cavallini, A. Castaldini, 1994 .

Characterization of Si/Si1−xGex/Si heterostructures by capacitance‐transient spectroscopy

A. Peaker, E. Parker, T. Whall, 1994 .

Extrinsic stacking fault generation related to high--k dielectric growth on a Si substrate

P. Hurley, B. Hamilton, A. Peaker, 2007 .

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer

V. Markevich, A. Peaker, S. Lastovskii, 2021, Journal of Applied Physics.

Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon

V. Markevich, A. Peaker, S. Lastovskii, 2022, Physica Status Solidi (a).

Electrically active defects induced by hydrogen and helium implantations in Ge

A. Larsen, V. Markevich, A. Peaker, 2008 .

Implantation defects and n-type doping in Ge and Ge rich SiGe

A. Satta, E. Simoen, V. Markevich, 2008 .

The determination of valence band discontinuities in Si/Si1−xGex/Si heterojunctions by capacitance‐voltage techniques

A. Peaker, E. Parker, T. Whall, 1993 .

The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors

Anthony R. Peaker, Sandrine Bernardini, I. D. Hawkins, 2006 .

LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4 GOLD-HYDROGEN COMPLEX IN SILICON

P. Deixler, A. Larsen, A. Peaker, 1998 .

Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study

V. Markevich, A. Peaker, R. Jacimovic, 2009 .

The effects of majority carrier diffusion on the minority carrier radiative lifetime in thin layer surface free GaAs/AlGaAs structures

B. Hamilton, J. Rimmer, I. Hawkins, 1991 .

Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors

V. Markevich, A. Peaker, N. Abrosimov, 2023, Solar Energy Materials and Solar Cells.

Negative-bias-temperature-instability in metal–insulator–semiconductor structures

A. Peaker, G. Petkos, S. N. Volkos, 2004 .