T. Onishi

Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor

O. Nakatsuka, M. Sakashita, H. Fujiwara, 2020, Japanese Journal of Applied Physics.

Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs

H. Fujiwara, K. Kutsuki, T. Onishi, 2018 .

Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs

H. Fujiwara, K. Kutsuki, T. Onishi, 2017 .

Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs

Y. Yamashita, N. Soejima, H. Fujiwara, 2019, Solid-State Electronics.

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs

H. Fujiwara, K. Kutsuki, T. Onishi, 2016 .

An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs

J. Saito, K. Kutsuki, E. Kagoshima, 2020, Japanese Journal of Applied Physics.