P. Reddy

发表

Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au–Cu phthalocyanine interlayer

V. R. Reddy, Chel-Jong Choi, Arunandan Kumar, 2020 .

Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation

S. Pavlidis, Z. Sitar, R. Collazo, 2022, Applied Physics Letters.

Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2020 .

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

V. R. Reddy, Chel-Jong Choi, C. S. Harsha, 2018 .

Electrical and frequency-dependent properties of Au/Sm 2 O 3 /n-GaN MIS junction with a high-k rare-earth Sm 2 O 3 as interlayer

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2017 .

Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer

V. R. Reddy, Chel-Jong Choi, I. N. Reddy, 2016 .

Electro Deposition of Nano Crystalline La 2 O 3 on p-type Si Wafer and Electrical Characterization for CMOS Applications

K. Bikshalu, K. Rao, K. Bikshalu, 2015 .

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

V. Rajagopal Reddy, P. R. Sekhar Reddy, Vallivedu Janardhanam, 2016 .

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

M. H. Breckenridge, M. Boćkowski, S. Pavlidis, 2022, Applied Physics Express.

Study of Gate Leakage Current on AlGaN/GaN MOSHEMTs with Atomic Layer Deposited Al₂O₃ Gate Oxide

Chel-Jong Choi, V. Janardhanam, K. Shim, 2019 .