Yann-Michel Niquet

发表

Multiscale simulation of carbon nanotube transistors

Thomas Zimmer, Cristell Maneux, Sebastien Fregonese, 2013 .

SOI CMOS technology for quantum information processing

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

Transport properties of strained silicon nanowires

Viet Hung Nguyen, Christophe Delerue, Christophe Krzeminski, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire

Romain Wacquez, Maud Vinet, Marc Sanquer, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model

Mikaël Casse, Sylvain Barraud, Gilles Reimbold, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Si based quantum computer architecture and associated engineering challenges

Louis Hutin, Xavier Jehl, Yann-Michel Niquet, 2020 .

Electronic Charge Transport Properties of Semiconducting Nanowires.

Martin Persson, Yann-Michel Niquet, Stephan Roche, 2007 .

Ab initio quantum transport in defective Graphene

Simon M-M Dubois, Jean-Christophe Charlier, Yann-Michel Niquet, 2011 .

Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications (Conference Presentation)

Alban Gassenq, Jérôme Faist, Alexei Chelnokov, 2016, Photonics Europe.

Si MOS technology for spin-based quantum computing

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

Nanowires: Promising Candidates for Electrostatic Control in Future Nanoelectronic Devices

Sylvain Barraud, Sebastien Martinie, Daniela Munteanu, 2012 .

Electronic transport in two-dimensional Graphene with structural defects

Simon M-M Dubois, Jean-Christophe Charlier, Yann-Michel Niquet, 2011 .

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

D. Rideau, Christophe Delerue, Yann-Michel Niquet, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

MOS technology for quantum computing: recent progress and perspectives for scaling up

Maud Vinet, Mikaël Casse, Gérard Billiot, 2021, 2021 Device Research Conference (DRC).

Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

Jing Li, Marc Sanquer, Sylvain Barraud, 2015, Nano letters (Print).

Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement

Christophe Delerue, Yann-Michel Niquet, Y. Niquet, 2007 .

Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

Enge Wang, Christophe Delerue, Yann-Michel Niquet, 2010 .

Transport properties of graphene containing structural defects

Jean-Christophe Charlier, Yann-Michel Niquet, Stephan Roche, 2012, 1204.4574.

Charge transport in chemically doped 2D graphene.

Yann-Michel Niquet, Stephan Roche, François Triozon, 2008, Physical review letters.

Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics.

Gianluca Fiori, Yann-Michel Niquet, Stephan Roche, 2012, ACS nano.

Gate-controllable negative differential conductance in graphene tunneling transistors

Philippe Dollfus, Yann-Michel Niquet, V. Hung Nguyen, 2012 .

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, Physical review letters.

Quantum Transport Length Scales in Silicon-based Semiconducting Nanowires: Surface Roughness Effects

Martin Persson, Yann-Michel Niquet, Stephan Roche, 2008, 0801.1613.

Orientational dependence of charge transport in disordered silicon nanowires.

Yann-Michel Niquet, Stephan Roche, François Triozon, 2008, Nano letters.

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, 1708.02903.

Quantum confinement in germanium nanocrystals

Christophe Delerue, Yann-Michel Niquet, G. Allan, 2000 .

All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

Yann-Michel Niquet, Y. Niquet, L. Bourdet, 2018, 1802.04693.

Exchange-correlation potentials in the adiabatic connection fluctuation-dissipation framework

Xavier Gonze, Yann-Michel Niquet, M. Fuchs, 2003 .

Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2014, Nano letters.

Transport length scales in disordered graphene-based materials: strong localization regimes and dimensionality effects.

Yann-Michel Niquet, Stephan Roche, Aurélien Lherbier, 2008, Physical review letters.

Electronic structure of semiconductor nanowires

Christophe Delerue, Yann-Michel Niquet, Nguyen Hong Quang, 2006 .

Effects of strain on the carrier mobility in silicon nanowires.

Christophe Delerue, Christophe Krzeminski, Yann-Michel Niquet, 2012, Nano letters.

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2018, IEEE Transactions on Electron Devices.