L. Rubin

Improved photoresist integrity by UV photostabilization for high dose, high energy ion implants

C. Ukah, L. Rubin, D. Whiteside, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology

L. Lanzerotti, S. Voldman, W. Morris, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Superior latch-up resistance of high dose, high energy implanted p/sup +/ buried layers

L. Chan, W. Morris, L. Chan, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

High-energy ion implanters and applications take off

W. Morris, L. Rubin, 1997 .