H. Bleichner

2-D characterization of dynamic charge distribution in MOS controlled thyristors: experiment and simulation

W. Fichtner, E. Nordlander, H. Lendenmann, 1994, IEEE Electron Device Letters.

The influence of gate-metallization potential drop on transient GTO characteristics

E. Nordlander, H. Bleichner, J. Vobecky, 1988, Technical Digest., International Electron Devices Meeting.

4.5 kV 4H-SiC diodes with ideal forward characteristic

H. Bleichner, H. Lendenmann, A. Mukhitdinov, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

An optical system for bilateral recombination-radiation diagnostics of the carrier redistribution in switching power devices

E. Nordlander, M. Lundqvist, H. Bleichner, 1991 .

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Bleichner, H. Lendenmann, Christer Hallin, 2002 .

Bright-line defect formation in silicon carbide injection diodes

H. Bleichner, H. Bleichner, A. Konstantinov, 1997 .

A comparative study of the carrier distributions in dynamically operating GTO's by means of two optically probed measurement methods

E. Nordlander, M. Lundqvist, M. Rosling, 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..