M. Bevan

发表

All-silicon internal barrier detectors: a voltage-tunable LWIR staring focal plane technology

P. R. Emtage, H. Nathanson, R. Thomas, 1992, 1992 International Technical Digest on Electron Devices Meeting.

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

G.A. Brown, A. Chatterjee, M. Rodder, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Stability of zirconium silicate films on Si under vacuum and O2 annealing

I. Baumvol, L. Miotti, A. Rotondaro, 2001 .

Enabling thermal IL and ALD HfOx integration for sub-20nm gate stack

S. Datta, T. Sato, A. Brand, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

A high performance 90 nm logic technology with a 37 nm gate length, dual plasma nitrided gate dielectric and differential offset spacer

P. Nicollian, J. Deloach, R. Khamankar, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics

R. Khamankar, P. Tiner, A. Varghese, 2005 .

Characterization of film materials in wafer processing technology development by XPS

C. R. Brundle, Wei Liu, G. Saheli, 2019, Journal of Electron Spectroscopy and Related Phenomena.

Reliability evaluation of HfSiON gate dielectric film with 12.8 /spl Aring/ SiO/sub 2/ equivalent thickness

J. McPherson, R. Khamankar, A. Rotondaro, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide

Jeffrey T. Roberts, S. Campbell, L. Colombo, 2000 .

Thermally induced Zr incorporation into Si from zirconium silicate thin films

J. L. Duggan, R. Wallace, B. Gnade, 2001 .

Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors

A. Rotondaro, L. Colombo, T. H. Baum, 2002 .

Interdiffusion studies for HfSixOy and ZrSixOy on Si

R. Wallace, B. Gnade, L. Colombo, 2002 .

Key performance-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes

Luigi Colombo, H. F. Schaake, D. Chandra, 1996 .

Growth of high quality ZnSe on closely lattice-matched InGaAs substrates by metal organic chemical vapor deposition

W. Duncan, H. Shih, A. Syllaios, 1997 .

In situ sensors for monitoring and control in molecular beam epitaxial growth of Hg1−xCdxTe

G. H. Westphal, W. Duncan, H. Shih, 1996 .

A photoluminescence comparison of CdTe thin films grown by molecular‐beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuum

W. J. Choyke, Z. Feng, S. Krishnaswamy, 1988 .

Formation and control of defects during molecular beam epitaxial growth of HgCdTe

D. Chandra, H. Shih, M. Bevan, 1998 .

Organometallic vapor‐phase epitaxy of Hg1−xCdxTe on {211}‐oriented substrates

T. Temofonte, M. Bevan, N. Doyle, 1992 .

Implementation of a computer-controlled MOVPE system to grow epitaxial CMT

K. Woodhouse, M. Bevan, 1984 .

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

A. Brand, S. Mahapatra, S. Datta, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Metal–organic chemical vapor deposition of mercury cadmium telluride epitaxial films

J. Thompson, K. Woodhouse, M. Bevan, 1986 .

Room‐temperature midwavelength two‐color infrared detectors with HgCdTe/CdTe multilayer structures by metal‐organic chemical‐vapor deposition

M. Chen, M. Bevan, 1995 .

Structural studies of HgCdTe grown by MOCVD on lattice-matched substrates

J. Greggi, M. Bevan, N. Doyle, 1990 .

Influence of layer thickness on the quality of mercury cadmium telluride epilayers grown by the interdiffused multilayer process

P. M. Raccah, J. Thompson, Z. Zhang, 1986 .

A comparison of Hg1-xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates

D. Snyder, M. Bevan, N. Doyle, 1990 .

A comparison of HgCdTe metalorganic chemical vapor deposition films on lattice matched CdZnTe and CdTeSe substrates

D. Snyder, J. Greggi, M. Bevan, 1990 .

Low‐level extrinsic doping for p‐ and n‐type (100) HgCdTe grown by molecular‐beam epitaxy

P. R. Emtage, A. Noreika, T. Temofonte, 1989 .

Dopant penetration studies through Hf silicate

Robert M. Wallace, Bruce E. Gnade, Luigi Colombo, 2005 .

Phosphorus and arsenic penetration studies through HfSixOy and HfSixOyNz films

M. J. Kim, R. Wallace, B. Gnade, 2002 .

Boron penetration studies from p+ polycrystalline Si through HfSixOy

M. J. Kim, R. Wallace, B. Gnade, 2002 .

Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics

J. McPherson, S. Aur, P. Nicollian, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Scaled Gate Stacks for Sub-20-nm CMOS Logic Applications Through Integration of Thermal IL and ALD HfOx

A. Brand, S. Mahapatra, S. Datta, 2013, IEEE Electron Device Letters.

An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes

B. Hornung, C. Machala, A. Krishnan, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Interfacial Diffusion Studies of Hf and Zr into Si from Thermally Annealed Hf and Zr Silicates

R. Wallace, B. Gnade, L. Colombo, 2001 .