A. Chakraborty

发表

Temperature dependent etching of Gallium Nitride layers grown by PA -MBE

Rahul Kumar, D. Biswas, Subhashis Das, 2015, 2015 International Conference on Microwave and Photonics (ICMAP).

Impact of stress effect on triple material gate step-FinFET with DC and AC analysis

S. Maity, A. Chowdhury, R. Das, 2020 .

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

S. K. Jana, Rahul Kumar, D. Biswas, 2014 .

Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

D. Biswas, Subhashis Das, Saptarsi Ghosh, 2017 .

Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode

Rahul Kumar, D. Biswas, Subhashis Das, 2015 .

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Rahul Kumar, D. Biswas, S. M. Dinara, 2014, Proceedings of the 2014 IEEE Students' Technology Symposium.

Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE

D. Biswas, Subhashis Das, Saptarsi Ghosh, 2014, Proceedings of the 2014 IEEE Students' Technology Symposium.

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

Rahul Kumar, D. Biswas, S. M. Dinara, 2015 .

A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0)

Rahul Kumar, P. Banerji, D. Biswas, 2015 .

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

Rahul Kumar, D. Biswas, Subhashis Das, 2015 .

Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening

S. K. Jana, Rahul Kumar, D. Biswas, 2015, Electronic Materials Letters.

Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

Rahul Kumar, D. Biswas, S. M. Dinara, 2016 .

Comprehensive Analytical Modeling of N-polar GaN/AlGaN Insulated Gate HEMTs with and without Polarization Neutralization Layer

D. Biswas, S. M. Dinara, Saptarsi Ghosh, 2014 .

Temperature-dependent short-channel parameters of FinFETs

P. Sahu, S. Maity, R. Das, 2018, Journal of Computational Electronics.

Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique

D. Biswas, Saptarsi Ghosh, P. Mukhopadhyay, 2018 .

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

S. K. Jana, D. Biswas, Subhashis Das, 2018, IEEE Transactions on Electron Devices.