P. S. Vergeles

发表

Movement of basal plane dislocations in GaN during electron beam irradiation

S. Pearton, In‐Hwan Lee, A. Polyakov, 2015 .

Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

B. Zvonkov, Yu. A. Danilov, V. Eremenko, 2014 .

Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2007 .

Microcathodoluminescence spectra evolution for planar and nanopillar multiquantum-well GaN-based structures as a function of electron irradiation dose

In‐Hwan Lee, A. Polyakov, Han-Su Cho, 2014 .

Investigations of electron beam induced conductivity in silicon oxide thin films

E. Yakimov, S. Borisov, P. S. Vergeles, 2010 .

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth

H. Amano, A. Polyakov, A. Markov, 2009 .

Defects with bright contrast in the induced-current mode in GaN-based light-emitting structures

E. Yakimov, P. S. Vergeles, S. A. Bel’nik, 2007 .

Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers

N. B. Smirnov, S. J. Pearton, I. Shchemerov, 2020, Journal of Physics D: Applied Physics.

Comparative Study of Optical and Electrical Properties of Grown-In and Freshly Introduced Dislocations in GaN by SEM Methods

E. Yakimov, P. S. Vergeles, V. Orlov, 2020, Journal of Electronic Materials.

Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2007 .

On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch

I. Khodos, Yu. A. Danilov, V. Eremenko, 2019, Applied Surface Science.

Study of Extended Electrically Active Defects in Heterostructures Based on (Ga,Mn)As/(In,Ga)As by Electron Beam-Induced Current and Deep-Level Transient Spectroscopy

Yu. A. Danilov, P. S. Vergeles, M. Dorokhin, 2019, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2008 .

Experimental estimation of electron–hole pair creation energy in β-Ga2O3

N. B. Smirnov, A. Polyakov, I. Shchemerov, 2021, Applied Physics Letters.

Charging Effects in Al-SiO2-p-Si Structures After Low-Energy Electron Beam Irradiation

E. Yakimov, P. S. Vergeles, Yuriy O. Kulanchikov, 2020, Journal of Electronic Materials.

Parasitic p–n junctions formed at V-pit defects in p-GaN

S. Pearton, In‐Hwan Lee, A. Vasilev, 2021 .

EBIC characterization of light-emitting structures based on GaN

E. Yakimov, P. S. Vergeles, N. Shmidt, 2007 .

EBIC investigation of InGaN/GaN multiple quantum well structures irradiated with low energy electrons

E. Yakimov, P. S. Vergeles, 2011 .

Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

A. Shikoh, E. Yakimov, P. S. Vergeles, 2020 .

Dislocation glide in GaN films grown by the lateral-overgrowth method induced by low-energy electron-beam irradiation

E. Yakimov, P. S. Vergeles, 2016, Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques.

Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

E. Yakimov, P. S. Vergeles, E. Yakimov, 2011 .

Investigation of the Effect of Electron-Beam Irradiation on the Defect Structure of Laterally Overgrown GaN Films via the Induced-Current and Cathodoluminescence Methods

E. Yakimov, P. S. Vergeles, 2018, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

E. Yakimov, P. S. Vergeles, 2015 .

EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth

N. B. Smirnov, A. Polyakov, A. Govorkov, 2008 .

Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2008 .

Study of the effect of irradiation with the SEM electron beam on cathodoluminescence and the induced current in InGaN/GaN structures with multiple quantum wells

E. Yakimov, P. S. Vergeles, N. Shmidt, 2011 .

Effect of low energy electron irradiation on optical properties of InGaN/GaN light emitting structures

E. Yakimov, P. S. Vergeles, E. Yakimov, 2011 .

Study of dislocation EBIC image width in GaN films and GaN based structures

E. Yakimov, P. S. Vergeles, 2009 .

Inverse bias effect on the optical properties of light-emitting diodes with multiple InGaN/GaN quantum wells when irradiated by an electron beam in a scanning electron microscope

E. Yakimov, P. S. Vergeles, 2015, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Temperature dependence of the cathodoluminescence spectra of irradiated light-emitting-diode structures with multiple InGaN/GaN quantum wells

E. Yakimov, P. S. Vergeles, 2013, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Influence of electron-beam irradiation in SEM on the cathodoluminescence and electron-beam-induced current in InGaN/GaN light-emitting diodes with a buried active region

E. Yakimov, P. S. Vergeles, N. Shmidt, 2012, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Investigation of the Effect of Irradiation by a Low-Energy Electron Beam on the Capacitance–Voltage Characteristics of SiO2

E. Yakimov, P. S. Vergeles, Yuriy O. Kulanchikov, 2021, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Effect of low-energy electron irradiation on voltage-capacity curves of Al/SiO2/Si structure

E. Yakimov, P. S. Vergeles, Yuriy O. Kulanchikov, 2019, Modern Electronic Materials.