Tatsuya Ohguro

发表

Process dependence of 1/f noise : For realization of high performance analog circuits

Kazuya Matsuzawa, K. Kojima, Tatsuya Ohguro, 2003 .

Tatsuya Ohguro, Christopher Hess, 2016 .

Hiroshi Iwai, Hideaki Nii, Hidemi Ishiuchi, 1999, The VLSI Handbook.

Low profile double resonance frequency tunable antenna using RF MEMS variable capacitor for digital terrestrial broadcasting reception

Hiroki Shoki, Tatsuya Ohguro, Shuichi Obayashi, 2009, 2009 IEEE Asian Solid-State Circuits Conference.

2.2um BSI CMOS image sensor with two layer photo-detector

Yoshitaka Egawa, Hirofumi Yamashita, Tatsuya Ohguro, 2015, Electronic Imaging.

MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

S. Kumashiro, Mitiko Miura-Mattausch, S. Miyamoto, 2004 .

Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits

Tatsuya Ohguro, Satoshi Inaba, Akio Kaneko, 2015, IEICE Trans. Electron..

Special Section on the 2010 International Conference on Microelectronic Test Structures

Tatsuya Ohguro, 2012 .

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations

Shunsuke Miyamoto, Hans Jürgen Mattausch, Shigetaka Kumashiro, 2008, Math. Comput. Simul..

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Ryosuke Inagaki, Norio Sadachika, Tatsuya Ezaki, 2007 .

Single-gate 0.15 and 0.12 μm CMOS with Co salicide technology

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1999 .

Evaluation methodology for current collapse phenomenon of GaN HEMTs

Takeshi Hamamoto, Takuo Kikuchi, Tatsuya Ohguro, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Session 6: RF

Colin C. McAndrew, Tatsuya Ohguro, 2012, ICMTS 2012.

A study of self-align doped channel structure for low power and low l/f noise operation

Hiroshi Iwai, Yasunori Miyahara, Tatsuya Ohguro, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation

Kazuya Matsuzawa, Tatsuya Ohguro, Hisayo Sasaki Momose, 2011 .

MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime

Shunsuke Miyamoto, Hans Jürgen Mattausch, Shigetaka Kumashiro, 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation

Ryuichi Fujimoto, Hiroshi Iwai, Hiroshi Tanimoto, 1998 .

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors

Shunsuke Miyamoto, Hans Jürgen Mattausch, Norio Sadachika, 2009, IEICE Trans. Electron..

Next generation compact model for digital and analog circuit design

Tatsuya Ohguro, 2007 .

1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation

Kyoji Yamashita, Hans Jürgen Mattausch, Shigetaka Kumashiro, 2005, IEICE Trans. Electron..

Advanced rf CMOS technology

Hiroshi Iwai, K. Inoh, Tatsuya Ohguro, 1999, Smart Materials, Nano-, and Micro- Smart Systems.

An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation

Atsushi Suzuki, Shinji Miyano, Nobuaki Otsuka, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

A High Performance 0.15μm Single Gate CMOS Technology

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995 .

Thermal stability of CoSi/sub 2/ film for CMOS salicide

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 2000 .

Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETs

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1997 .

Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 2001 .

High performance RF characteristics of raised gate/source/drain CMOS with Co salicide

Hiroshi Iwai, H. Kimijima, Hiroshi Naruse, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

Hiroshi Iwai, Tatsuya Ohguro, Yasuhiro Katsumata, 1995 .

A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure

Tatsuya Ohguro, Hideki Shibata, Tamio Ikehashi, 2010, 2010 IEEE MTT-S International Microwave Symposium.

Gate-length and drain-voltage dependence of thermal drain noise in advanced metal-oxide-semiconductor-field-effect transistors

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, Takahiro Iizuka, 2005 .

Ultrathin gate oxide CMOS on [111] surface-oriented Si substrate

Hiroshi Iwai, Hidemi Ishiuchi, Tatsuya Ohguro, 2002 .

Silicided silicon-sidewall source and drain (S/sup 4/D) structure for high-performance 75-nm gate length pMOSFETs

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

The Demonstration of Complementary Tunnel FET with Vertical Tunneling Junction Structure Compatible with Si CMOS Platform

Masakazu Goto, Shigeru Kawanaka, Tatsuya Ohguro, 2013 .

An 0.18-/spl mu/m CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

Hiroshi Iwai, H. Kimijima, Hiroshi Naruse, 1999 .

Scalable Parasitic Components Model of CMOS for RF Circuit Design

Tatsuya Ohguro, Hideki Kimijima, Nobuyuki Itoh, 2003, IEICE Trans. Fundam. Electron. Commun. Comput. Sci..

Power Si-MOSFET operating with high efficiency under low supply voltage

Hiroshi Iwai, K. Matsuzaki, Tatsuya Ohguro, 2000 .

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

Ryosuke Inagaki, Hans Jurgen Mattausch, Takahiro Iizuka, 2006 .

Tenth micron p-MOSFET's with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD

Hiroshi Iwai, C. Fiegna, Y. Akasaka, 1993, Proceedings of IEEE International Electron Devices Meeting.

Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995, Proceedings of International Electron Devices Meeting.

Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Kazuya Matsuzawa, Yuichiro Mitani, Tatsuya Ohguro, 2014, IEEE Transactions on Electron Devices.

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

Hiroshi Iwai, Tatsuya Ohguro, Yukihiro Ushiku, 1994 .

A study on hot carrier effects on N-MOSFETs under high substrate impurity concentration

Hiroshi Iwai, C. Fiegna, Tatsuya Ohguro, 1995 .

High performance digital-analog mixed device on an Si substrate with resistivity beyond 1 k/spl Omega/ cm

Tatsuya Ohguro, Takashi Yoshitomi, T. Kimura, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Origin of Enhanced Thermal Noise for 100nm-MOSFETs

Hiroo Masuda, Hans Jurgen Mattausch, Mitiko Miura-Mattausch, 2003 .

RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption

Hiroshi Iwai, H. Kimijima, T. Yoshitomi, 1998 .

A high frequency 0.35 /spl mu/m gate length power silicon NMOSFET operating with breakdown voltage of 13 V

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip

Shoji Otaka, Hiroshi Iwai, H. Kimijima, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5 V

Hiroshi Iwai, Hiroshi Tanimoto, Tatsuya Ohguro, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, Takahiro Iizuka, 2007 .

Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Fabrication of sub‐50‐nm gate length n‐metal–oxide–semiconductor field effect transistors and their electrical characteristics

Hiroshi Iwai, Claudio Fiegna, Tatsuya Ohguro, 1995 .

An epitaxial channel MOSFET for improving flicker noise under low supply voltage

Tatsuya Ohguro, Fumiyoshi Matsuoka, H. Oyamatsu, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

An intelligent bipolar actuation method with high stiction immunity for RF MEMS capacitive switches and variable capacitors

Hidemi Ishiuchi, Tatsuya Ohguro, Kazunari Ishimaru, 2007 .

The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 /spl mu/m epitaxial Si channel N-MOSFETs grown by UHV-CVD

Hiroshi Iwai, Tatsuya Ohguro, Hisayo Sasaki Momose, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Hiroshi Iwai, H. Kimijima, Tatsuya Ohguro, 1998 .

NiSi salicide technology for scaled CMOS

Hiroshi Iwai, Tatsuya Ohguro, Shun-ichiro Ohmi, 2002 .